de los Reyes, Carlos A.
Alemany, Lawrence B.
Weldeghiorghis, Thomas K.
Khabashesku, Valery N.
Sudeep, Parambath M.
Martí, Angel A.
Tiwary, Chandra Sekhar
Singh, Abhishek K.
Ajayan, Pulickel M.
Radhakrishnan, Sruthi, Das, Deya, Samanta, Atanu, et al.. "Fluorinated h-BN as a magnetic semiconductor." Science Advances, 3, no. 7 (2017) American Association for the Advancement of Science: https://doi.org/10.1126/sciadv.1700842.
We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
American Association for the Advancement of Science
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Fluorinated h-BN as a magnetic semiconductor