Show simple item record

dc.contributor.authorRadhakrishnan, Sruthi
Das, Deya
Samanta, Atanu
de los Reyes, Carlos A.
Deng, Liangzi
Alemany, Lawrence B.
Weldeghiorghis, Thomas K.
Khabashesku, Valery N.
Kochat, Vidya
Jin, Zehua
Sudeep, Parambath M.
Martí, Angel A.
Chu, Ching-Wu
Roy, Ajit
Tiwary, Chandra Sekhar
Singh, Abhishek K.
Ajayan, Pulickel M.
dc.date.accessioned 2017-10-19T17:11:53Z
dc.date.available 2017-10-19T17:11:53Z
dc.date.issued 2017
dc.identifier.citation Radhakrishnan, Sruthi, Das, Deya, Samanta, Atanu, et al.. "Fluorinated h-BN as a magnetic semiconductor." Science Advances, 3, no. 7 (2017) American Association for the Advancement of Science: https://doi.org/10.1126/sciadv.1700842.
dc.identifier.urihttps://hdl.handle.net/1911/97799
dc.description.abstract We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
dc.language.iso eng
dc.publisher American Association for the Advancement of Science
dc.rights This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/
dc.title Fluorinated h-BN as a magnetic semiconductor
dc.type Journal article
dc.citation.journalTitle Science Advances
dc.citation.volumeNumber 3
dc.citation.issueNumber 7
dc.identifier.digital Fluorinated_h-BN_magnetic_semiconductor
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1126/sciadv.1700842
dc.identifier.pmcid PMC5510960
dc.identifier.pmid 28740867
dc.type.publication publisher version
dc.citation.articleNumber e1700842


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
Except where otherwise noted, this item's license is described as This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.