Fluorinated h-BN as a magnetic semiconductor
Radhakrishnan, Sruthi; Das, Deya; Samanta, Atanu; de los Reyes, Carlos A.; Deng, Liangzi; More... Alemany, Lawrence B.; Weldeghiorghis, Thomas K.; Khabashesku, Valery N.; Kochat, Vidya; Jin, Zehua; Sudeep, Parambath M.; Martí, Angel A.; Chu, Ching-Wu; Roy, Ajit; Tiwary, Chandra Sekhar; Singh, Abhishek K.; Ajayan, Pulickel M. Less...
We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.