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dc.contributor.authorDu, Lingjie
Li, Tingxin
Lou, Wenkai
Wu, Xingjun
Liu, Xiaoxue
Han, Zhongdong
Zhang, Chi
Sullivan, Gerard
Ikhlassi, Amal
Chang, Kai
Du, Rui-Rui
dc.date.accessioned 2017-10-06T18:43:16Z
dc.date.available 2017-10-06T18:43:16Z
dc.date.issued 2017
dc.identifier.citation Du, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." Physical Review Letters, 119, no. 5 (2017) American Physical Society: https://doi.org/10.1103/PhysRevLett.119.056803.
dc.identifier.urihttps://hdl.handle.net/1911/97777
dc.description.abstract We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
dc.language.iso eng
dc.publisher American Physical Society
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
dc.type Journal article
dc.citation.journalTitle Physical Review Letters
dc.citation.volumeNumber 119
dc.citation.issueNumber 5
dc.identifier.digital Tuning_Edge_States
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.119.056803
dc.type.publication publisher version
dc.citation.articleNumber 056803


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