Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

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Author
Du, Lingjie
Li, Tingxin
Lou, Wenkai
Wu, Xingjun
Liu, Xiaoxue
Han, Zhongdong
Zhang, Chi
Sullivan, Gerard
Ikhlassi, Amal
Chang, Kai
Du, Rui-Rui
Date
2017
Abstract
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
Citation
Du, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." Physical Review Letters, 119, no. 5 (2017) American Physical Society: https://doi.org/10.1103/PhysRevLett.119.056803.
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Journal article
Publisher
American Physical Society
Citable link to this page
https://hdl.handle.net/1911/97777
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