Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Author
Date
2017Abstract
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer
InAs
/
GaInSb
quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary
InAs
/
GaSb
QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the
Z
2
topological insulator. The
InAs
/
GaInSb
bilayers offer a much sought-after platform for future studies and applications of the QSHI.
Citation
Published Version
Type
Journal article
Publisher
Citable link to this page
https://hdl.handle.net/1911/97777Rights
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