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    Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

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    Author
    Du, Lingjie; Li, Tingxin; Lou, Wenkai; Wu, Xingjun; Liu, Xiaoxue; More... Han, Zhongdong; Zhang, Chi; Sullivan, Gerard; Ikhlassi, Amal; Chang, Kai; Du, Rui-Rui Less...
    Date
    2017
    Abstract
    We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
    Citation
    Du, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." Physical Review Letters, 119, no. 5 (2017) American Physical Society: https://doi.org/10.1103/PhysRevLett.119.056803.
    Published Version
    https://doi.org/10.1103/PhysRevLett.119.056803
    Type
    Journal article
    Publisher
    American Physical Society
    Citable link to this page
    https://hdl.handle.net/1911/97777
    Rights
    Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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    • Faculty Publications [4990]
    • Physics and Astronomy Publications [1771]

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    Home | FAQ | Contact Us | Privacy Notice | Accessibility Statement
    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892
    Site Map