Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Du, Lingjie; Li, Tingxin; Lou, Wenkai; Wu, Xingjun; Liu, Xiaoxue; Han, Zhongdong; Zhang, Chi; Sullivan, Gerard; Ikhlassi, Amal; Chang, Kai; Du, Rui-Rui

doi:https://doi.org/10.1103/PhysRevLett.119.056803

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Author

Du, Lingjie

Li, Tingxin

Lou, Wenkai

Wu, Xingjun

Liu, Xiaoxue

Han, Zhongdong

Zhang, Chi

Sullivan, Gerard

Ikhlassi, Amal

Chang, Kai

Du, Rui-Rui

Date

2017

Citation

Du, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." Physical Review Letters, 119, no. 5 (2017) https://doi.org/10.1103/PhysRevLett.119.056803.

Published Version

https://doi.org/10.1103/PhysRevLett.119.056803

Abstract

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

Type

Journal article