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dc.contributor.authorPradhan, N.R.
Rhodes, D.
Zhang, Q.
Talapatra, S.
Terrones, M.
Ajayan, P.M.
Balicas, L.
dc.date.accessioned 2017-07-31T18:12:32Z
dc.date.available 2017-07-31T18:12:32Z
dc.date.issued 2013
dc.identifier.citation Pradhan, N.R., Rhodes, D., Zhang, Q., et al.. "Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2." Applied Physics Letters, 102, no. 12 (2013) American Institute of Physics: http://dx.doi.org/10.1063/1.4799172.
dc.identifier.urihttps://hdl.handle.net/1911/95627
dc.language.iso eng
dc.publisher American Institute of Physics
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
dc.type Journal article
dc.citation.journalTitle Applied Physics Letters
dc.citation.volumeNumber 102
dc.citation.issueNumber 12
dc.identifier.digital Intrinsic_carrier_mobility
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4799172
dc.type.publication publisher version
dc.citation.articleNumber 123105


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