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    Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection

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    Haugan, Heather J.; Brown, Gail J.; Mahalingam, Krishnamurthy; Grazulis, Larry; Noe, Gary T.; More... Ogden, Nathan E.; Kono, Junichiro Less...
    Date
    2014
    Abstract
    The authors report growth studies to develop an InAs/GaInSb superlattice (SL) material for very long wavelength infrared detection. They select a SL structure of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb that is designed for the greatest possible detectivity, and tune growth conditions to achieve the best quality ternary material. Since the material quality of grown layers is particularly sensitive to extrinsic defects such as nonradiative recombination centers generated during the growth process, the authors investigate the effect of the growth temperature (Tg) on the spectral photoresponse (PR) and carrier recombination lifetime using photoconductivity and time-resolved differential reflectivity measurements. Results indicate that a molecular beam epitaxy growth process the authors developed produces a consistent energy gap around 50 meV, determined from the PR spectra, but the intensity of the spectra is sensitive to Tg. For SLs grown at Tg between 390 and 470 °C, the PR signal intensity gradually increases as Tg increases from 400 to 440 °C, reaching a maximum at 440 °C. Outside this growth window, the SL quality deteriorates very rapidly. However, the carrier recombination lifetime measured at 300 K was not sensitive to Tg. Although the SL sample grown at 430 °C produced the longest lifetime of 84 ns, the average 300 K lifetime value remained around 74 ns.
    Citation
    Haugan, Heather J., Brown, Gail J., Mahalingam, Krishnamurthy, et al.. "Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 32, no. 2 (2014) American Vacuum Society: http://dx.doi.org/10.1116/1.4864746.
    Published Version
    http://dx.doi.org/10.1116/1.4864746
    Type
    Journal article
    Publisher
    American Vacuum Society
    Citable link to this page
    https://hdl.handle.net/1911/94864
    Rights
    Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
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    Site Map