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dc.contributor.authorStier, Andreas V.
McCreary, Kathleen M.
Jonker, Berend T.
Kono, Junichiro
Crooker, Scott A.
dc.date.accessioned 2017-06-05T17:33:45Z
dc.date.available 2017-06-05T17:33:45Z
dc.date.issued 2016
dc.identifier.citation Stier, Andreas V., McCreary, Kathleen M., Jonker, Berend T., et al.. "Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 34, no. 4 (2016) http://dx.doi.org/10.1116/1.4948992.
dc.identifier.urihttp://hdl.handle.net/1911/94765
dc.description.abstract The authors describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 T. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magnetoreflection spectra from atomically thin tungsten disulphide are presented. The data clearly reveal not only the valley Zeeman effect in these two-dimensional semiconductors but also the small quadratic excitondiamagnetic shift from which the very small exciton size can be directly inferred. Finally, the authors present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors.
dc.language.iso eng
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields
dc.type Journal article
dc.citation.journalTitle Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
dc.citation.volumeNumber 34
dc.citation.issueNumber 4
dc.contributor.publisher AIP Publishing LLC.
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1116/1.4948992
dc.type.publication publisher version
dc.citation.articleNumber 04J102


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