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dc.contributor.authorAmani, Matin
Chin, Matthew L.
Mazzoni, Alexander L.
Burke, Robert A.
Najmaei, Sina
Ajayan, Pulickel M.
Lou, Jun
Dubey, Madan
dc.date.accessioned 2017-06-05T17:33:45Z
dc.date.available 2017-06-05T17:33:45Z
dc.date.issued 2014
dc.identifier.citation Amani, Matin, Chin, Matthew L., Mazzoni, Alexander L., et al.. "Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors." Applied Physics Letters, 104, no. 20 (2014) AIP Publishing LLC.: http://dx.doi.org/10.1063/1.4873680.
dc.identifier.urihttps://hdl.handle.net/1911/94763
dc.description.abstract We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.
dc.language.iso eng
dc.publisher AIP Publishing LLC.
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors
dc.type Journal article
dc.citation.journalTitle Applied Physics Letters
dc.citation.volumeNumber 104
dc.citation.issueNumber 20
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4873680
dc.type.publication publisher version
dc.citation.articleNumber 203506


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