Show simple item record

dc.contributor.authorAmani, Matin
Chin, Matthew L.
Mazzoni, Alexander L.
Burke, Robert A.
Najmaei, Sina
Ajayan, Pulickel M.
Lou, Jun
Dubey, Madan
dc.date.accessioned 2017-06-05T17:33:45Z
dc.date.available 2017-06-05T17:33:45Z
dc.date.issued 2014
dc.identifier.citation Amani, Matin, Chin, Matthew L., Mazzoni, Alexander L., et al.. "Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors." Applied Physics Letters, 104, no. 20 (2014) http://dx.doi.org/10.1063/1.4873680.
dc.identifier.urihttp://hdl.handle.net/1911/94763
dc.description.abstract We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.
dc.language.iso eng
dc.title Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors
dc.type Journal article
dc.citation.journalTitle Applied Physics Letters
dc.citation.volumeNumber 104
dc.citation.issueNumber 20
dc.contributor.publisher AIP Publishing LLC.
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4873680
dc.type.publication publisher version
dc.citation.articleNumber 203506


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record