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    Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors

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    Author
    Amani, Matin
    Chin, Matthew L.
    Mazzoni, Alexander L.
    Burke, Robert A.
    Najmaei, Sina
    Ajayan, Pulickel M.
    Lou, Jun
    Dubey, Madan
    Date
    2014
    Citation
    Amani, Matin, Chin, Matthew L., Mazzoni, Alexander L., et al.. "Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2ᅠfield effect transistors." Applied Physics Letters, 104, no. 20 (2014) http://dx.doi.org/10.1063/1.4873680.
    Published Version
    http://dx.doi.org/10.1063/1.4873680
    Abstract
    We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility.
    Type
    Journal article
    Citable link to this page
    http://hdl.handle.net/1911/94763
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    • Faculty Publications [3507]
    • Materials Science and NanoEngineering Publications [217]

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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892