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dc.contributor.authorKrustok, J.
Raadik, T.
Jaaniso, R.
Kiisk, V.
Sildos, I.
Marandi, M.
Komsa, H.-P.
Li, B.
Zhang, X.
Gong, Y.
Ajayan, P.M.
dc.date.accessioned 2017-05-22T17:16:48Z
dc.date.available 2017-05-22T17:16:48Z
dc.date.issued 2016
dc.identifier.citation Krustok, J., Raadik, T., Jaaniso, R., et al.. "Optical study of local strain related disordering in CVD-grown MoSe2ᅠmonolayers." Applied Physics Letters, 109, no. 25 (2016) AIP Publishing: http://dx.doi.org/10.1063/1.4972782.
dc.identifier.urihttps://hdl.handle.net/1911/94319
dc.description.abstract We present temperature dependent micro-photoluminescence and room temperature photoreflectance spectroscopy studies on aged MoSe2 monolayers with high surface roughness. A0 and B0 exciton bands were detected at 1.512 eV and 1.72 eV, respectively, which are 50–70 meV lower than those commonly reported for high-quality samples. It is shown that the difference can be accounted for using a model of localized excitons for disordered MoSe2monolayers where the optical band gap energy fluctuations could be caused by random distribution of local tensile strain due to surface roughness. The density of localized exciton states is found to follow the Lorentzian shape, where the peak of this distribution is about 70 meV from the energy of delocalized states.
dc.language.iso eng
dc.publisher AIP Publishing
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Optical study of local strain related disordering in CVD-grown MoSe2ᅠmonolayers
dc.type Journal article
dc.citation.journalTitle Applied Physics Letters
dc.citation.volumeNumber 109
dc.citation.issueNumber 25
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4972782
dc.type.publication publisher version
dc.citation.articleNumber 253106


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