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dc.contributor.authorThe Tracker Group of the CMS Collaboration
dc.date.accessioned 2017-05-15T21:11:38Z
dc.date.available 2017-05-15T21:11:38Z
dc.date.issued 2015
dc.identifier.citation The Tracker Group of the CMS Collaboration. "Impact of low-dose electron irradiation on n+p silicon strip sensors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 803, (2015) Elsevier: 100-112. http://dx.doi.org/10.1016/j.nima.2015.08.026.
dc.identifier.urihttps://hdl.handle.net/1911/94269
dc.description.abstract The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed.
dc.language.iso eng
dc.publisher Elsevier
dc.rights This is an open access article under the CC BY license
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.title Impact of low-dose electron irradiation on n+p silicon strip sensors
dc.type Journal article
dc.citation.journalTitle Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
dc.subject.keywordSilicon strip sensors
Charge collection
Radiation damage
Surface damage
dc.citation.volumeNumber 803
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1016/j.nima.2015.08.026
dc.type.publication publisher version
dc.citation.firstpage 100
dc.citation.lastpage 112


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