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dc.creatorNajmaei, Sina
Liu, Zheng
Ajayan, Pulickel M.
Lou, Jun
dc.date.accessioned 2017-04-25T16:31:15Z
dc.date.available 2017-04-25T16:31:15Z
dc.date.issued 2017-02-28
dc.identifier.citation Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M. and Lou, Jun, "Growth methods for controlled large-area fabrication of high-quality graphene analogs." Patent US9580834B2. issued 2017-02-28. Retrieved from https://hdl.handle.net/1911/94106.
dc.identifier.urihttps://hdl.handle.net/1911/94106
dc.description.abstract In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS2.
dc.format.extent 46
dc.language.iso eng
dc.title Growth methods for controlled large-area fabrication of high-quality graphene analogs
dc.type Utility patent
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes
dc.contributor.publisher United States Patent and Trademark Office
dc.type.genre patents
dc.type.dcmi Text
dc.date.filed 2014-03-11
dc.identifier.patentID US9580834B2
dc.contributor.assignee Rice University


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