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    Growth methods for controlled large-area fabrication of high-quality graphene analogs

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    Author
    Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun
    Date
    2017-02-28
    Abstract
    In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS2.
    Citation
    Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M. and Lou, Jun, "Growth methods for controlled large-area fabrication of high-quality graphene analogs." Patent US9580834B2. issued 2017-02-28. Retrieved from https://hdl.handle.net/1911/94106.
    Type
    Utility patent
    Citable link to this page
    https://hdl.handle.net/1911/94106
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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892
    Site Map