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dc.contributor.authorTao, Lei
Sreenivasan, Sreeprasad
Shahsavari, Rouzbeh
dc.date.accessioned 2017-01-27T19:05:16Z
dc.date.available 2017-01-27T19:05:16Z
dc.date.issued 2017
dc.identifier.citation Tao, Lei, Sreenivasan, Sreeprasad and Shahsavari, Rouzbeh. "Interlaced, Nanostructured Interface with Graphene Buffer Layer Reduces Thermal Boundary Resistance in Nano/Microelectronic Systems." ACS Applied Materials & Interfaces, 9, no. 1 (2017) American Chemical Society: 989-998. http://dx.doi.org/10.1021/acsami.6b09482.
dc.identifier.urihttps://hdl.handle.net/1911/93783
dc.description.abstract Improving heat transfer in hybrid nano/microelectronic systems is a challenge, mainly due to the high thermal boundary resistance (TBR) across the interface. Herein, we focus on gallium nitride (GaN)/diamond interface—as a model system with various high power, high temperature, and optoelectronic applications—and perform extensive reverse nonequilibrium molecular dynamics simulations, decoding the interplay between the pillar length, size, shape, hierarchy, density, arrangement, system size, and the interfacial heat transfer mechanisms to substantially reduce TBR in GaN-on-diamond devices. We found that changing the conventional planar interface to nanoengineered, interlaced architecture with optimal geometry results in >80% reduction in TBR. Moreover, introduction of conformal graphene buffer layer further reduces the TBR by ∼33%. Our findings demonstrate that the enhanced generation of intermediate frequency phonons activates the dominant group velocities, resulting in reduced TBR. This work has important implications on experimental studies, opening up a new space for engineering hybrid nano/microelectronics.
dc.language.iso eng
dc.publisher American Chemical Society
dc.rights This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by the American Chemical Society.
dc.title Interlaced, Nanostructured Interface with Graphene Buffer Layer Reduces Thermal Boundary Resistance in Nano/Microelectronic Systems
dc.type Journal article
dc.citation.journalTitle ACS Applied Materials & Interfaces
dc.contributor.org Smalley Institute for Nanoscale Science and Technology
dc.subject.keywordGaN−diamond interface
heat management
rNEMD
TBR
dc.citation.volumeNumber 9
dc.citation.issueNumber 1
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1021/acsami.6b09482
dc.identifier.pmid 28073276
dc.type.publication post-print
dc.citation.firstpage 989
dc.citation.lastpage 998


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