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dc.creatorLei, Sidong; Ge, Liehui; George, Antony; Li, Bo; Vajtai, Robert; Ajayan, Pulickel M.
dc.date.accessioned 2016-10-18T14:52:31Z
dc.date.available 2016-10-18T14:52:31Z
dc.date.issued 2016-08-30
dc.identifier.citation Lei, Sidong; Ge, Liehui; George, Antony; Li, Bo; Vajtai, Robert; Ajayan, Pulickel M., "Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture." Patent US9431565B2. issued 2016-08-30. Retrieved from https://hdl.handle.net/1911/91959.
dc.identifier.urihttps://hdl.handle.net/1911/91959
dc.description.abstract An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.
dc.format.extent 13
dc.language.iso eng
dc.title Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture
dc.type Utility patent
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes
dc.contributor.publisher United States Patent and Trademark Office
dc.type.genre patents
dc.type.dcmi Text
dc.date.filed 2014-10-23
dc.identifier.patentID US9431565B2
dc.contributor.assignee Rice University


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