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dc.contributor.authorWang, Gunuk
Lee, Jae-Hwang
Yang, Yang
Ruan, Gedeng
Kim, Nam Dong
Ji, Yongsung
Tour, James M.
dc.date.accessioned 2016-04-04T21:23:36Z
dc.date.available 2016-04-04T21:23:36Z
dc.date.issued 2015
dc.identifier.citation Wang, Gunuk, Lee, Jae-Hwang, Yang, Yang, et al.. "Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage." Nano Letters, 15, no. 9 (2015) American Chemical Society: 6009-6014. http://dx.doi.org/10.1021/acs.nanolett.5b02190.
dc.identifier.urihttps://hdl.handle.net/1911/88845
dc.description.abstract Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.
dc.language.iso eng
dc.publisher American Chemical Society
dc.rights This is an open access article published under an ACS AuthorChoiceᅠLicense, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
dc.rights.urihttp://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.title Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage
dc.type Journal article
dc.citation.journalTitle Nano Letters
dc.contributor.org Richard E. Smalley Institute of Nanoscale Science and Technology
dc.subject.keywordnanoporous
Ta2O5?x
nonvolatile memory
resistive memory
tantalum oxide
dc.citation.volumeNumber 15
dc.citation.issueNumber 9
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1021/acs.nanolett.5b02190
dc.identifier.pmid 26252444
dc.type.publication publisher version
dc.citation.firstpage 6009
dc.citation.lastpage 6014


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