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dc.contributor.authorPerea-López, Néstor
Lin, Zhong
Pradhan, Nihar R.
Iñiguez-Rábago, Agustín
Elías, Ana Laura
McCreary, Amber
Lou, Jun
Ajayan, Pulickel M.
Terrones, Humberto
Balicas, Luis
Terrones, Mauricio
dc.date.accessioned 2016-02-02T19:17:43Z
dc.date.available 2016-02-02T19:17:43Z
dc.date.issued 2014
dc.identifier.citation Perea-López, Néstor, Lin, Zhong, Pradhan, Nihar R., et al.. "CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage." 2D Materials, 1, (2014) IOP Publishing: 011004. http://dx.doi.org/10.1088/2053-1583/1/1/011004.
dc.identifier.urihttps://hdl.handle.net/1911/88301
dc.description.abstract We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W−1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.
dc.language.iso eng
dc.publisher IOP Publishing
dc.rights Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.title CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage
dc.type Journal article
dc.citation.journalTitle 2D Materials
dc.citation.volumeNumber 1
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1088/2053-1583/1/1/011004
dc.type.publication publisher version
dc.citation.firstpage 011004


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