Experiments towards size and dopant control of germanium quantum dots for solar applications
Author
Oliva-Chatelain, Brittany L.; Barron, Andrew R.
Date
2016Abstract
While the literature for the doping of silicon quantum dots (QDs) and nanocrystals (NCs) is extensive, reports of doping their germanium analogs are sparse. We report a range of attempts to dope Ge QDs both during and post-synthesis. The QDs have been characterized by TEM, XPS, and I/V measurements of SiO2 coated QD thin films in test cells using doped Si substrates. The solution synthesis of Ge QDs by the reduction of GeCl4 with LiAlH4 results in Ge QDs with a low level of chlorine atoms on the surface; however, during the H2PtCl6 catalyzed alkylation of the surface with allylamine, to enable water solubility of the Ge QDs, chlorine functionalization of the surface occurs resulting in p-type doping of the QD. A similar location of the dopant is proposed for phosphorus when incorporated by the addition of PCl3 during QD synthesis; however, the electronic doping effect is greater. The detected dopants are all present on the surface of the QD (s-type), suggesting a self-purification process is operative. Attempts to incorporate boron or gallium during synthesis were unsuccessful.
Citation
Published Version
Keyword
dopant; quantum dot; germanium; silica; phosphorous
Type
Journal article
Publisher
Citable link to this page
https://hdl.handle.net/1911/87843Rights
This is an open access article distributed under the terms of the Creative Commons Attribution LiceseLink to License
http://creativecommons.org/licenses/by/4.0/Metadata
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