The spontaneous polarization of thin film LiNbO$\sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage ...

The time dependence of the carrier relaxation in undoped solid C$\sb{60}$ thin films has been studied by monitoring changes in the optical transmission upon photoexcitation using sub picosecond laser pulses at 2 eV. Optical ...

Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue electro-optic device material. Problems with obtaining suitable p-type conductivity have limited device development. Zinc ...

Utilizing the scanning tunneling microscope, the electronic and structural properties of a variety of carbon based nanostructures, are explored. Among these, threefold electron scattering on graphite generated by vacancies ...

This dissertation analyzes the feasibility and advantages of molecular functionalization of scanning tunneling microscope (STM) probes with buckminsterfullerenes. The C$\sb{60}$ molecules are adsorbed onto the tunneling ...

A number of different methods for electrically characterizing ZnSe thin films are presented. These include the Hall effect, current-voltage profiling, and capacitance-voltage profiling. The planar Schottky technique is ...

The fabrication of solid C$\sb{60}$ device structures by vacuum sublimation methods is described. The experimentally determined threshold of intrinsic conductivity of solid C$\sb{60}$ is $\sim$1.5eV. The observations of ...

Ferroelectric thin films of lithium niobate have been epitaxially grown on a variety of silicon and gallium arsenide substrates by reactive r.f. sputtering. The deposition process was optimized by independently varying the ...

The incorporation of a thin film of LiNbO$\sb3$ in a conventional MOS (metal-oxide-semiconductor) structure gives the possibility of two fundamentally different types of computer memory architectures. One, based on ...

Degradation of the tunneling oxide film in EEPROM and FLASH memory test structures has been studied. Two models have been used to characterize the tunneling induced degradation of the oxide thin film. They are the effective ...