Highly oriented polycrystalline thin films of lithium niobate on (012), (100), and (110) sapphire single crystal substrates, (111) silicon and SiO$\sb2$/(100)Si wafers were grown by magnetron rf sputtering and metallo-organic ...

The spontaneous polarization of thin film LiNbO$\sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage ...

Low frequency noise in giant magnetoresistive spin valves has been studied as a means of optimizing signal to noise ratios and characterizing device performance. The devices studied were sputter deposited NiFe/Cu/NiFe/FeMn ...

The time dependence of the carrier relaxation in undoped solid C$\sb{60}$ thin films has been studied by monitoring changes in the optical transmission upon photoexcitation using sub picosecond laser pulses at 2 eV. Optical ...

A new widely tunable mid-infrared (IR) source based on difference-frequency generation (DFG) in Gallium Selenide (GaSe) for use in high-resolution spectroscopy and trace gas detection is described. The characteristics of ...

The theory of continuous wave difference frequency generation (DFG) is studied for a mixing of two waves in a nonlinear medium, the absorption effect of the material is included and optimization conditions are studied. ...

A model for simulation of laser produced plasmas that couples absorbed energy, plasma dynamics and radiation pressure was developed. The unusual experimental result of spectral narrowing of reflected laser pulses was ...

The application of diode-laser-pumped tunable IR sources to trace gas detection in air is discussed. The design and technology issues of CW tunable mid-infrared difference-frequency generation are addressed. Feasibility ...

Design, development, and application of novel all-solid-state spectroscopic gas sensors is reported. These compact instruments employ mid-infrared difference-frequency generation pumped by room-temperature semiconductor ...

Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue electro-optic device material. Problems with obtaining suitable p-type conductivity have limited device development. Zinc ...