The time dependence of the carrier relaxation in undoped solid C$\sb{60}$ thin films has been studied by monitoring changes in the optical transmission upon photoexcitation using sub picosecond laser pulses at 2 eV. Optical ...

Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue electro-optic device material. Problems with obtaining suitable p-type conductivity have limited device development. Zinc ...

Ferroelectric thin films of lithium niobate have been epitaxially grown on a variety of silicon and gallium arsenide substrates by reactive r.f. sputtering. The deposition process was optimized by independently varying the ...

The incorporation of a thin film of LiNbO$\sb3$ in a conventional MOS (metal-oxide-semiconductor) structure gives the possibility of two fundamentally different types of computer memory architectures. One, based on ...