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Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures
Silicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a ...
Resistive switching in silicon oxide-based systems
Voltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon. ...