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dc.contributor.authorLi, Hong
Contryman, Alex W.
Qian, Xiaofeng
Ardakani, Sina Moeini
Gong, Yongji
Wang, Xingli
Weisse, Jeffrey M.
Lee, Chi Hwan
Zhao, Jiheng
Ajayan, Pulickel M.
Li, Ju
Manoharan, Hari C.
Zheng, Xiaolin
dc.date.accessioned 2015-10-30T15:40:40Z
dc.date.available 2015-10-30T15:40:40Z
dc.date.issued 2015
dc.identifier.citation Li, Hong, Contryman, Alex W., Qian, Xiaofeng, et al., . "Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide." Nature Communications, 6, (2015) http://dx.doi.org/10.1038/ncomms8381.
dc.identifier.urihttp://hdl.handle.net/1911/81998
dc.description.abstract The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this ‘artificial atom’ concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.
dc.language.iso eng
dc.rights This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the articleメs Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.title Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
dc.type Journal article
dc.contributor.funder Samsung Advanced Institute of Technology Global Research Outreach Program
dc.contributor.funder Samsung R&D Center America, Silicon Valley (SRA-SV)
dc.contributor.funder National Science Foundation
dc.citation.journalTitle Nature Communications
dc.citation.volumeNumber 6
dc.contributor.publisher Nature Publishing Group
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1038/ncomms8381
dc.identifier.grantID IC2012-1318 (Samsung Advanced Institute of Technology Global Research Outreach Program)
dc.identifier.grantID DMR-1206916 (National Science Foundation)
dc.identifier.grantID CBET-1240696 (National Science Foundation)
dc.identifier.grantID DMR-1120901 (National Science Foundation)
dc.identifier.grantID TG-DMR130038 (National Science Foundation)
dc.type.publication publisher version


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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the articleメs Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material.
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the articleメs Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material.