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dc.creatorTour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao
dc.date.accessioned 2015-10-26T19:04:33Z
dc.date.available 2015-10-26T19:04:33Z
dc.date.issued 2015-09-08
dc.identifier.citation Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao, "Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof." Patent US9129676B2. issued 2015-09-08. Retrieved from https://hdl.handle.net/1911/81921.
dc.identifier.urihttps://hdl.handle.net/1911/81921
dc.description.abstract In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
dc.format.extent 24
dc.language.iso eng
dc.title Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
dc.type Utility patent
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes
dc.contributor.publisher United States Patent and Trademark Office
dc.type.genre patents
dc.type.dcmi Text
dc.date.filed 2013-10-10
dc.identifier.patentID US9129676B2
dc.contributor.assignee Rice University


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