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dc.creatorTour, James M.
He, Jianli
Chen, Bo
Flatt, Austen K.
Stephenson, Jason J.
Doyle, Condell D.
dc.date.accessioned 2015-05-04T19:05:53Z
dc.date.available 2015-05-04T19:05:53Z
dc.date.issued 2010-04-27
dc.identifier.urihttp://hdl.handle.net/1911/80017
dc.description.abstract Work from several laboratories has shown that metal nanofilaments cause problems in some molecular electronics testbeds. A new testbed for exploring the electrical properties of single molecules has been developed to eliminate the possibility of metal nanofilament formation and to ensure that molecular effects are measured. This metal-free system uses single-crystal silicon and single-walled carbon nanotubes as electrodes for the molecular monolayer. A direct Si-arylcarbon grafting method is used. Use of this structure with π-conjugated organic molecules results in a hysteresis loop with current-voltage measurements that are useful for an electronic memory device. The memory is non-volatile for more than 3 days, non-destructive for more than 1,000 reading operations and capable of more than 1,000 write-erase cycles before device breakdown. Devices without π-conjugated molecules (Si—H surface only) or with long-chain alkyl-bearing molecules produced no hysteresis, indicating that the observed memory effect is molecularly relevant.
dc.format.extent 14 pp
dc.language.iso eng
dc.title Metal-free silicon-molecule-nanotube testbed and memory device
dc.type Utility patent
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes.
dc.contributor.publisher United States Patent and Trademark Office
dc.type.genre patents
dc.type.dcmi Text
dc.date.filed 2006-01-23
dc.identifier.patentID US7704323B2
dc.contributor.assignee Rice University


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