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dc.contributor.authorWang, Minjie
Vajtai, Robert
Ajayan, Pulickel M.
Kono, Junichiro
dc.date.accessioned 2015-01-08T14:55:03Z
dc.date.available 2015-01-08T14:55:03Z
dc.date.issued 2014
dc.identifier.citation Wang, Minjie, Vajtai, Robert, Ajayan, Pulickel M., et al.. "Electrically tunable hot-silicon terahertz attenuator." Applied Physics Letters, 105, (2014) AIP Publishing LLC: 141110. http://dx.doi.org/10.1063/1.4897531.
dc.identifier.urihttps://hdl.handle.net/1911/78910
dc.description.abstract We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 103. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ~550 K, with the corresponding free-carrier density adjusted between ~1011 cm−3 and ~1017 cm−3. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550 K (corresponding to a DC voltage variation of only ~7 V) and completely shields terahertz radiation above 550 K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.
dc.language.iso eng
dc.publisher AIP Publishing LLC
dc.rights This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by AIP Publishing LLC
dc.title Electrically tunable hot-silicon terahertz attenuator
dc.type Journal article
dc.contributor.funder National Science Foundation
dc.citation.journalTitle Applied Physics Letters
dc.subject.keywordterahertz
attenuation
shielding
hot silicon
dc.citation.volumeNumber 105
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4897531
dc.identifier.grantID OISE-0968405 (National Science Foundation)
dc.type.publication post-print
dc.citation.firstpage 141110


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