Efficient Modulation of 1.55 μm Radiation with Gated Graphene on a Silicon Microring Resonator
Ajayan, Pulickel M.
The gate-controllability of the Fermi-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation in the telecommunication band. However, a high modulation efficiency has not been demonstrated to date, because of the small amount of light absorption in graphene. Here, we demonstrate a ~40% amplitude modulation of 1.55 μm radiation with gated single-layer graphene that is coupled with a silicon microring resonator. Both the quality factor and resonance wavelength of the silicon microring resonator were strongly modulated through gate tuning of the Fermi level in graphene. These results promise an efficient electro-optic modulator, ideal for applications in large-scale on-chip optical interconnects that are compatible with complementary metal-oxide-semiconductor technology
graphene photonics; NIR modulator; silicon microring resonator; high on/off ratio
Citable link to this pagehttps://hdl.handle.net/1911/78902
RightsThis is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by the American Chemical Society.
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