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dc.contributor.authorMahjoub, Akram M.
Nicol, Alec
Abe, Takuto
Ouchi, Takahiro
Iso, Yuhei
Kida, Michio
Aoki, Noboyuki
Miyamoto, Katsuhiko
Omatsu, Takashige
Bird, Jonathan P.
Ferry, David K.
Ishibashi, Koji
Ochiai, Yuichi
dc.date.accessioned 2014-11-11T16:06:21Z
dc.date.available 2014-11-11T16:06:21Z
dc.date.issued 2013
dc.identifier.citation Mahjoub, Akram M., Nicol, Alec, Abe, Takuto, et al.. "GR-FET application for high-frequency detection device." Nano Express, 8, (2013) Springer: http://www.nanoscalereslett.com/content/8/1/22.
dc.identifier.urihttps://hdl.handle.net/1911/78264
dc.description.abstract A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.
dc.language.iso eng
dc.publisher Springer
dc.title GR-FET application for high-frequency detection device
dc.type Journal article
dc.citation.journalTitle Nano Express
dc.subject.keywordgraphene
microwave application
terahertz detection
frequency response
bolometric effect
nonlinear effect
ambient condition
dc.citation.volumeNumber 8
dc.type.dcmi Text
dc.identifier.doihttp://www.nanoscalereslett.com/content/8/1/22


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