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    GR-FET application for high-frequency detection device

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    Author
    Mahjoub, Akram M.; Nicol, Alec; Abe, Takuto; Ouchi, Takahiro; Iso, Yuhei; More... Kida, Michio; Aoki, Noboyuki; Miyamoto, Katsuhiko; Omatsu, Takashige; Bird, Jonathan P.; Ferry, David K.; Ishibashi, Koji; Ochiai, Yuichi Less...
    Date
    2013
    Abstract
    A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.
    Citation
    Mahjoub, Akram M., Nicol, Alec, Abe, Takuto, et al.. "GR-FET application for high-frequency detection device." Nano Express, 8, (2013) Springer: http://www.nanoscalereslett.com/content/8/1/22.
    Published Version
    http://www.nanoscalereslett.com/content/8/1/22
    Keyword
    graphene; microwave application; terahertz detection; frequency response; bolometric effect; More... nonlinear effect; ambient condition Less...
    Type
    Journal article
    Publisher
    Springer
    Citable link to this page
    https://hdl.handle.net/1911/78264
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    • Student Publications [6]

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    Home | FAQ | Contact Us | Privacy Notice | Accessibility Statement
    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892
    Site Map