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dc.contributor.authorKappera, Rajesh
Voiry, Damien
Yalcin, Sibel Ebru
Jen, Wesley
Acerce, Muharrem
Torrel, Sol
Branch, Brittany
Lei, Sidong
Chen, Weibing
Najmaei, Sina
Lou, Jun
Ajayan, Pulickel M.
Gupta, Gautam
Mohite, Aditya D.
Chhowalla, Manish
dc.date.accessioned 2014-10-30T19:33:33Z
dc.date.available 2014-10-30T19:33:33Z
dc.date.issued 2014
dc.identifier.citation Kappera, Rajesh, Voiry, Damien, Yalcin, Sibel Ebru, et al.. "Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2." APL Materials, 2, (2014) AIP: 92516. http://dx.doi.org/10.1063/1.4896077.
dc.identifier.urihttps://hdl.handle.net/1911/77675
dc.description.abstract Two dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.
dc.language.iso eng
dc.publisher AIP
dc.rights All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.title Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
dc.type Journal article
dc.citation.journalTitle APL Materials
dc.citation.volumeNumber 2
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4896077
dc.type.publication publisher version
dc.citation.firstpage 92516


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