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dc.contributor.advisor Ajayan, Pulickel M.
dc.creatorLei, Sidong
dc.date.accessioned 2014-09-16T20:38:21Z
dc.date.available 2014-09-16T20:38:21Z
dc.date.created 2013-12
dc.date.issued 2013-12-02
dc.date.submitted December 2013
dc.identifier.citation Lei, Sidong. "Synthesis and photo-response study on GaSe and InSe atomic layers." (2013) Master’s Thesis, Rice University. https://hdl.handle.net/1911/77202.
dc.identifier.urihttps://hdl.handle.net/1911/77202
dc.description.abstract The two dimensional atomically layered materials are drawing intense attention in recent years, because of their special physical properties. Graphene, as a layered material with large charge carrier mobility, has been studied for years. Besides, graphene, large amounts of materials exhibit unique electronic and optical properties. GaSe (Gallium Selenide) and InSe (Indium Selenide) are van der Waals type layered crystal and widely applied in the area of photo-sensing, photo-voltage, non-linear optics, etc. The atomically layered GaSe and InSe may exhibit unique optical and electrical properties. In this study, GaSe single atomically layered crystal was grown by vapor phase transport method, InSe atomically layered flakes were prepared by mechanical exfoliation method. TEM and SEM were applied to characterize the quality of the crystals. Raman studies revealed the changes of vibration modes as the number of layers varied. Photo-conductivity measurements were conducted to reveal the band-structure changes. As the number of atomically layers become less and less, the band gaps of both of GaSe and InSe increase. From our study, it is observed that the layered atomically layered GaSe and InSe shows larger photo-current on/off ratio, indicating less non-photo-generated charge carrier in layered GaSe and InSe. Meanwhile, InSe atomically layers have stronger visible-light response than GaSe, which makes InSe more suitable for atomicallyally layered photo-voltage device, and GaSe more suitable for UV detector. Besides, the home-made opto-electronic measurement probe-station is also discussed in detail.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subject2D materials
GaSe
InSe
Photo-conductivity
Materials science
dc.title Synthesis and photo-response study on GaSe and InSe atomic layers
dc.contributor.committeeMember Kono, Junichiro
dc.contributor.committeeMember Lou, Jun
dc.date.updated 2014-09-16T20:38:23Z
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Applied Physics
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science


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