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dc.contributor.authorKnez, Ivan
Rettner, Charles T.
Yang, See-Hun
Parkin, Stuart S.P.
Du, Lingjie
Du, Rui-Rui
Sullivan, Gerard
dc.date.accessioned 2014-01-21T20:19:37Z
dc.date.available 2014-01-21T20:19:37Z
dc.date.issued 2014-01
dc.identifier.citation Knez, Ivan, Rettner, Charles T., Yang, See-Hun, et al.. "Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells." Physical Review Letters, 112, no. 2 (2014) American Physical Society: 26602. http://dx.doi.org/10.1103/PhysRevLett.112.026602.
dc.identifier.urihttps://hdl.handle.net/1911/75347
dc.description.abstract We observe edge transport in the topologically insulating InAs=GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2=h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.
dc.language.iso eng
dc.publisher American Physical Society
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells
dc.type Journal article
dc.contributor.funder DARPA MESO
dc.contributor.funder National Science Foundation
dc.contributor.funder Welch Foundation
dc.citation.journalTitle Physical Review Letters
dc.citation.volumeNumber 112
dc.citation.issueNumber 2
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.112.026602
dc.identifier.pmid 24484034
dc.identifier.grantID N66001-11-1-4105 (DARPA MESO)
dc.identifier.grantID DMR-1207562 (National Science Foundation)
dc.identifier.grantID C-1682 (Welch Foundation)
dc.type.publication publisher version
dc.citation.firstpage 26602


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