Show simple item record

dc.contributor.authorKim, Y.
Poumirol, J. M.
Lombardo, A.
Kalugin, N. G.
Georgiou, T.
Kim, Y. J.
Novoselov, K. S.
Ferrari, A. C.
Kono, J.
Kashuba, O.
Fal’ko, V. I.
Smirnov, D.
dc.date.accessioned 2013-09-18T17:04:50Z
dc.date.available 2013-09-18T17:04:50Z
dc.date.issued 2013-05-29
dc.identifier.citation Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J. Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Kashuba, V. I. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," Physical Review Letters, vol. 110, 2013.
dc.identifier.urihttps://hdl.handle.net/1911/72096
dc.description.abstract We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
dc.language.iso eng
dc.publisher American Physical Society
dc.title Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy
dc.type Journal article
dc.citation.journalTitle Physical Review Letters
dc.citation.volumeNumber 110
dc.type.dcmi Text
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.110.227402
dc.citation.firstpage 227402


Files in this item

Thumbnail

This item appears in the following Collection(s)

  • ECE Publications [1445]
    Publications by Rice University Electrical and Computer Engineering faculty and graduate students

Show simple item record