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    Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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    Kim, Y.; Poumirol, J. M.; Lombardo, A.; Kalugin, N. G.; Georgiou, T.; More... Kim, Y. J.; Novoselov, K. S.; Ferrari, A. C.; Kono, J.; Kashuba, O.; Fal’ko, V. I.; Smirnov, D. Less...
    Date
    2013-05-29
    Abstract
    We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
    Citation
    Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J. Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Kashuba, V. I. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," Physical Review Letters, vol. 110, 2013.
    Published Version
    http://dx.doi.org/10.1103/PhysRevLett.110.227402
    Type
    Journal article
    Publisher
    American Physical Society
    Citable link to this page
    https://hdl.handle.net/1911/72096
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    • ECE Publications [1443]

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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
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    Site Map