Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy
Author
Date
2013-05-29Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This
reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting
from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a
model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities
and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering
intensity inside the anticrossing gap, consistent with the experiments.
Citation
Published Version
Type
Journal article
Publisher
Citable link to this page
https://hdl.handle.net/1911/72096Metadata
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- ECE Publications [1494]