Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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Author
Kim, Y.
Poumirol, J. M.
Lombardo, A.
Kalugin, N. G.
Georgiou, T.
Kim, Y. J.
Novoselov, K. S.
Ferrari, A. C.
Kono, J.
Kashuba, O.
Fal’ko, V. I.
Smirnov, D.
Type
Journal article
Publisher
American Physical Society
Citation
Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J. Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Kashuba, V. I. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," Physical Review Letters, vol. 110, 2013.
Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
Date
2013-05-29
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