Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

Kim, Y.; Poumirol, J. M.; Lombardo, A.; Kalugin, N. G.; Georgiou, T.; Kim, Y. J.; Novoselov, K. S.; Ferrari, A. C.; Kono, J.; Kashuba, O.; Fal’ko, V. I.; Smirnov, D.

doi:http://dx.doi.org/10.1103/PhysRevLett.110.227402

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Author

Kim, Y.; Poumirol, J. M.; Lombardo, A.; Kalugin, N. G.; Georgiou, T.; More... Kim, Y. J.; Novoselov, K. S.; Ferrari, A. C.; Kono, J.; Kashuba, O.; Fal’ko, V. I.; Smirnov, D.

Date

2013-05-29

Abstract

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.

Citation

Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J. Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Kashuba, V. I. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," Physical Review Letters, vol. 110, 2013.

Published Version

http://dx.doi.org/10.1103/PhysRevLett.110.227402

Type

Journal article

Publisher

American Physical Society