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dc.contributor.authorAmani, Matin
Chin, Matthew L.
Birdwell, A. Glen
OメRegan, Terrance P.
Najmaei, Sina
Liu, Zheng
Ajayan, Pulickel M.
Lou, Jun
Dubey, Madan
dc.date.accessioned 2013-05-22T15:17:55Z
dc.date.available 2013-05-22T15:17:55Z
dc.date.issued 2013
dc.identifier.citation Amani, Matin, Chin, Matthew L., Birdwell, A. Glen, et al.. "Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition." Applied Physics Letters, 102, (2013) American Institute of Physics: 193107. http://dx.doi.org/10.1063/1.4804546.
dc.identifier.urihttps://hdl.handle.net/1911/71235
dc.description.abstract Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300K without a high-j dielectric overcoat and increased to 16.1 cm2/V s with a high-j dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.
dc.language.iso eng
dc.publisher American Institute of Physics
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
dc.type Journal article
dc.contributor.funder Army Research Office, Multidisciplinary University Research Initiative
dc.contributor.funder U.S. Army Research Laboratory
dc.citation.journalTitle Applied Physics Letters
dc.citation.volumeNumber 102
dc.embargo.terms none
dc.type.dcmi Text
dc.identifier.doihttp://dx.doi.org/10.1063/1.4804546
dc.type.publication publisher version
dc.citation.firstpage 193107


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