Chin, Matthew L.
Birdwell, A. Glen
OﾒRegan, Terrance P.
Ajayan, Pulickel M.
Amani, Matin, Chin, Matthew L., Birdwell, A. Glen, et al.. "Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition." Applied Physics Letters, 102, (2013) American Institute of Physics: 193107. http://dx.doi.org/10.1063/1.4804546.
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth
large-area single layers grown by chemical vapor deposition. The layer qualities and physical
properties were characterized using high-resolution Raman and photoluminescence spectroscopy,
scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET
devices was measured using field effect mobility measurements as a function of temperature. The
back-gated devices had mobilities of 6.0 cm2/V s at 300K without a high-j dielectric overcoat and
increased to 16.1 cm2/V s with a high-j dielectric overcoat. In addition the devices show on/off
ratios ranging from 105 to 109.
American Institute of Physics
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
Army Research Office, Multidisciplinary University Research Initiative
U.S. Army Research Laboratory
Applied Physics Letters