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dc.contributor.authorKnez, Ivan
Du, Rui-Rui
Sullivan, Gerard
dc.date.accessioned 2012-11-08T14:51:05Z
dc.date.available 2012-11-08T14:51:05Z
dc.date.issued 2012-10-31
dc.identifier.urihttp://hdl.handle.net/1911/68347
dc.description.abstract We present an experimental study of S−N−S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)]. In this regime we observe a ∼2e2/h Andreev conductance peak, consistent with a perfect Andreev reflection on the helical edge modes predicted by theories. The peak diminishes under a small applied magnetic field due to the breaking of time-reversal symmetry. This work thus demonstrates the helical property of the edge modes in a quantum spin Hall insulator.
dc.language.iso eng
dc.title Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator
dc.type Journal article
dc.citation.journalTitle Physical Review Letters
dc.citation.volumeNumber 109
dc.citation.pageNumber 186603
dc.embargo.terms none
dc.type.dcmi Text
dc.identifier.doi 10.1103/PhysRevLett.109.186603
dc.identifier.doi 10.1103/PhysRevLett.109.186603
dc.identifier.citation Knez, Ivan, Du, Rui-Rui and Sullivan, Gerard. (2012). "Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator." Physical Review Letters, vol. 109. pp. 186603. 10.1103/PhysRevLett.109.186603 and 10.1103/PhysRevLett.109.186603. http://hdl.handle.net/1911/68347.


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