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Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
Two dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on ...
Strain rate dependent mechanical properties in single crystal nickel nanowires
We measure the strain rate dependence of 0.2% offset yield stress in single-crystal nickel nanowires with diameters ranging from 80 to 300 nm. In situ tensile experiments with strain rates from 10 4 s 1 to 10 2 s 1 were ...
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized ...
Second harmonic microscopy of monolayer MoS2
We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. The second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear ...