Now showing items 1-4 of 4

    • Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator 

      Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard (2012)
      We present an experimental study of S−N−S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. ...
    • Observation of a Helical Luttinger Liquid in InAs/GaSb Quantum Spin Hall Edges 

      Li, Tingxin; Wang, Pengjie; Fu, Hailong; Du, Lingjie; Schreiber, Kate A.; Mu, Xiaoyang; Liu, Xiaoxue; Sullivan, Gerard; Csáthy, Gábor A.; Lin, Xi; Du, Rui-Rui (2015)
      We report on the observation of a helical Luttinger liquid in the edge of an InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, ...
    • Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells 

      Knez, Ivan; Rettner, Charles T.; Yang, See-Hun; Parkin, Stuart S.P.; Du, Lingjie; Du, Rui-Rui; Sullivan, Gerard (2014-01)
      We observe edge transport in the topologically insulating InAs=GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall ...
    • Robust Helical Edge Transport in Gated InAs/GaSb Bilayers 

      Du, Lingjie; Knez, Ivan; Sullivan, Gerard; Du, Rui-Rui (2015)
      We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance ...