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    Semi-analytical model for carbon nanotube and graphene nanoribbon transistors

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    Author
    Yang, Xuebei
    Date
    2010
    Advisor
    Mohanram, Kartik
    Degree
    Master of Science
    Abstract
    Carbon nanotubes and graphene provide high carrier mobility for ballistic transport, high carrier velocity for fast switching, and excellent mechanical and thermal conductivity. As a result, they are widely considered as next generation candidate materials for nanoelectronics. In this thesis, I first propose a physics-based semi-analytical model for Schottky-barrier (SB) carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model reduces the computational complexity in the two critical but time-consuming steps, namely the calculation of the tunneling probability and the self-consistent evaluation of the surface potential in the transistor channel. Since SB-type CNT and GNR transistors exhibit ambipolar conduction that is not preferable in digital applications, I further propose a semi-analytical model for the double-gate transistor structure that is able to control the ambipolar conduction in-field. Future directions, including the modeling of new CNT and GNR devices and novel circuits based on the in-field controllability of ambipolar conduction, will also be described.
    Keyword
    Electronics; Electrical engineering
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    • Rice University Electronic Theses and Dissertations [10740]

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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892