Transverse thermal conductivity of thin dielectric films
Brotzen, Franz R.
Doctor of Philosophy
Earlier work revealed that the transverse thermal conductivity of thin films of amorphous SiO$\sb2$ and $\rm Si\sb3N\sb4$ deposited on monocrystalline silicon decreased substantially when the film thickness was less than about 1$\mu$m. It is believed that the thickness effect has its origin in a high-resistance dielectric/silicon interface. When multiple interfaces were created by the intercalation of thin intermediate layers of polycrystalline silicon into the SiO$\sb2$ film, the thickness effect was enhanced. This observation pointed to an interfacial effect. Yet, when the intermediate layers consisted of metallic or dielectric materials, no enhancement was found. The thermal conductivity measurements were sensitive to the manner in which the SiO$\sb2$ films were deposited. A model accounting for the thickness effect is discussed.
Electronics; Electrical engineering; Engineering; Materials science