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dc.creatorFulkerson, William
dc.date.accessioned 2007-08-21T01:01:11Z
dc.date.available 2007-08-21T01:01:11Z
dc.date.issued 1962
dc.identifier.urihttps://hdl.handle.net/1911/18270
dc.description.abstract The vacuum behavior of radioactive and non-radioactive semiconducting films of CdS has been studied as a function of time in order to determine the effect of radioactive doping. Radioactive films containing S35 were made by reacting radioactive H2S with thin films of Cd metal. S35 decays with the emission of a weak beta to Cl35. The specific activity of the sulfur used in the experiments was sufficient to produce 1018 chlorine impurities/cm 3 in the CdS lattice during the first month of decay.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectChemical engineering
dc.title Effects of the decay of sulfur-35 on some electrical properties of cadmium sulfide semiconducting films
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Chemical and Biomolecular Engineering
thesis.degree.discipline Engineering
thesis.degree.grantor Rice University
thesis.degree.level Doctoral
thesis.degree.name Doctor of Philosophy
dc.identifier.citation Fulkerson, William. "Effects of the decay of sulfur-35 on some electrical properties of cadmium sulfide semiconducting films." (1962) Diss., Rice University. https://hdl.handle.net/1911/18270.


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