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dc.contributor.advisor Nordlander, Peter J.
dc.creatorWolfgang, John A.
dc.date.accessioned 2009-06-04T08:33:13Z
dc.date.available 2009-06-04T08:33:13Z
dc.date.issued 2000
dc.identifier.urihttps://hdl.handle.net/1911/17388
dc.description.abstract Recent experimental investigations into charge transfer during ion/semiconductor surface collisions indicate dependence of the scattered ion's neutralization probability upon the target surface's local electronic environment along the scattered ion trajectory. This work presents qualitative modeling of these experiments demonstrating how the target surface's local electrostatic potential and charge density modify the scattered ion's neutralization rates. These models have been applied to Ne+ scattering and S- recoil from CdS {0001} and {0001¯} surfaces as well as Ne + scattering from intrinsic, n- and p-doped Si(100)-(2x1) surfaces. Correlation between electrostatic surface potential and ion neutralization probability has been shown for ion scattering from the CdS surfaces. Ne + neutralization during scattering from the Si(100)-(2x1) surface correlates to local surface charge density along the ion trajectory. Variations in ion neutralization rate for the intrinsic, n- and p-doped surfaces have been correlated to band bending at the Si surface.
dc.format.extent 53 p.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectCondensed matter physics
dc.title Inelastic ion scattering from semiconductor surfaces
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Physics
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science
dc.identifier.citation Wolfgang, John A.. "Inelastic ion scattering from semiconductor surfaces." (2000) Master’s Thesis, Rice University. https://hdl.handle.net/1911/17388.


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