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    Polyimide-based field effect transistor structures

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    Author
    Steele, Jennifer Marie
    Date
    1999
    Advisor
    Wilson, William L., Jr.
    Degree
    Master of Science
    Abstract
    Because of the electrical insulating properties of polyimide, it is widely used in the packaging of semiconductor chips. However, it has been documented that the electrical resistivity can be decreased by several orders of magnitude to about 0.1--1 O-cm when irradiated with ultraviolet laser light. This unique property of polyimide can be exploited to fabricate devices. In this study, capacitor structures on silicon wafers were created using a laser-modified layer of conducting polyimide as the top plate and a still intact layer unmodified polyimide as the insulator. This work quantifies the properties and quality of these capacitor structures and optimizes the procedure for fabricating them. First, the capacitor-insulator transition of thin film polyimide on silicon wafers were characterized and compared to bulk experiments. Then capacitor structures were fabricated and studied. Finally, an unexpected frequency response was discovered originating from the conductivity of the laser-modified polyimide. This frequency response was successfully modeled in PSPICE.
    Keyword
    Electronics; Electrical engineering; Engineering; Materials science
    Citation
    Steele, Jennifer Marie. "Polyimide-based field effect transistor structures." (1999) Master’s Thesis, Rice University. https://hdl.handle.net/1911/17381.
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    • ECE Theses and Dissertations [597]
    • Rice University Electronic Theses and Dissertations [13796]

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    Managed by the Digital Scholarship Services at Fondren Library, Rice University
    Physical Address: 6100 Main Street, Houston, Texas 77005
    Mailing Address: MS-44, P.O.BOX 1892, Houston, Texas 77251-1892
    Site Map