Show simple item record

dc.contributor.advisor Wilson, William L., Jr.
dc.creatorStokes, Scott Wilson
dc.date.accessioned 2009-06-04T06:46:52Z
dc.date.available 2009-06-04T06:46:52Z
dc.date.issued 1997
dc.identifier.urihttps://hdl.handle.net/1911/17132
dc.description.abstract Laser-assisted metalorganic chemical vapor deposition (MOCVD) was used to grow crystalline zinc sulfide at temperatures as low as 200$\sp\circ$C. The metalorganic sources, dimethylzinc and diethylsulfide, were photodissociated with radiation from a 193 nm ArF excimer laser passing parallel to the substrate. Epitaxial films were grown on gallium arsenide by both the thermal and laser-assisted MOCVD methods. Zinc sulfide films grown on silicon substrates were polycrystalline possibly due to a reaction between sulfur and the silicon substrate creating an amorphous compound at the interface. X-ray diffraction and photoluminescence results indicate that films grown by laser-assisted MOCVD below 500$\sp\circ$C on either substrate were not as high quality as those grown above 500$\sp\circ$C. It is postulated that increased hydrocarbon contamination in the low temperature laser-assisted MOCVD grown films is responsible for the decrease in film quality.
dc.format.extent 81 p.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectElectronics
Electrical engineering
Engineering
Materials science
dc.title Laser-assisted metalorganic chemical vapor deposition of zinc sulfide
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Electrical and Computer Engineering
thesis.degree.discipline Engineering
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science
dc.identifier.citation Stokes, Scott Wilson. "Laser-assisted metalorganic chemical vapor deposition of zinc sulfide." (1997) Master’s Thesis, Rice University. https://hdl.handle.net/1911/17132.


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record