Now showing items 1-8 of 8

    • Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator 

      Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard (2012)
      We present an experimental study of S−N−S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. ...
    • Depinning transition of bubble phases in a high Landau level 

      Wang, Xuebin; Fu, Hailong; Du, Lingjie; Liu, Xiaoxue; Wang, Pengjie; Pfeiffer, L.N.; West, K.W.; Du, Rui-Rui; Lin, Xi (2015)
      In the higher Landau levels (N>0) a reentrant integer quantum Hall effect (RIQHE) state, which resides at fractional filling factors but exhibits integer Hall plateaus, has been previously observed and studied extensively. ...
    • Depinning transition of bubble phases in a high Landau level 

      Wang, Xuebin; Fu, Hailong; Du, Lingjie; Liu, Xiaoxue; Wang, Pengjie; Pfeiffer, L.N.; West, K.W.; Du, Rui-Rui; Lin, Xi (2015)
      In the higher Landau levels (N>0) a reentrant integer quantum Hall effect (RIQHE) state, which resides at fractional filling factors but exhibits integer Hall plateaus, has been previously observed and studied extensively. ...
    • Observation of a Helical Luttinger Liquid in InAs/GaSb Quantum Spin Hall Edges 

      Li, Tingxin; Wang, Pengjie; Fu, Hailong; Du, Lingjie; Schreiber, Kate A.; Mu, Xiaoyang; Liu, Xiaoxue; Sullivan, Gerard; Csáthy, Gábor A.; Lin, Xi; Du, Rui-Rui (2015)
      We report on the observation of a helical Luttinger liquid in the edge of an InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, ...
    • Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells 

      Knez, Ivan; Rettner, Charles T.; Yang, See-Hun; Parkin, Stuart S.P.; Du, Lingjie; Du, Rui-Rui; Sullivan, Gerard (2014-01)
      We observe edge transport in the topologically insulating InAs=GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall ...
    • Robust Helical Edge Transport in Gated InAs/GaSb Bilayers 

      Du, Lingjie; Knez, Ivan; Sullivan, Gerard; Du, Rui-Rui (2015)
      We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance ...
    • Scaling properties of the plateau transitions in the two-dimensional hole gas system 

      Wang, Xuebin; Liu, Haiwen; Zhu, Junbo; Shan, Pujia; Wang, Pengjie; Fu, Hailong; Du, Lingjie; Pfeiffer, L.N.; West, K.W.; Xie, X.C.; Du, Rui-Rui; Lin, Xi (2016)
      The behavior of phase coherence is studied in two-dimensional hole gas through the integer quantum Hall plateau-to-plateau transition. From the plateau transition as a function of temperature, scaling properties of multiple ...
    • Transport of a sliding Wigner crystal in the four flux composite fermion regime 

      Zhang, Chi; Du, Rui-Rui; Manfra, M.J.; Pfeiffer, L.N.; West, K.W. (2015)
      In two-dimensional (2D) electron systems, Wigner crystals (WC) and fractional quantum Hall effect (FQHE) liquids are competing ground states under low temperatures (T) and high magnetic fields (B). Here we report differential ...