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dc.contributor.advisor Rabson, Thomas A.
dc.creatorRost, Timothy Alan
dc.date.accessioned 2009-06-04T00:06:47Z
dc.date.available 2009-06-04T00:06:47Z
dc.date.issued 1991
dc.identifier.citation Rost, Timothy Alan. "A thin film lithium niobate ferroelectric transistor." (1991) Diss., Rice University. https://hdl.handle.net/1911/16480.
dc.identifier.urihttps://hdl.handle.net/1911/16480
dc.description.abstract The incorporation of a thin film of LiNbO$\sb3$ in a conventional MOS (metal-oxide-semiconductor) structure gives the possibility of two fundamentally different types of computer memory architectures. One, based on ferroelectric switching, involves the reorganization of charge in the transistor channel to compensate for the change in surface polarization. Another, based on the bulk photovoltaic effect, creates a change in the threshold of the transistor when exposed to incident light. With the use of a molybdenum liftoff process, such ferroelectric transistors have been realized. The properties of these transistors have been measured before and after exposure to laser illumination, and before and after the application of voltage pulses.
dc.format.extent 128 p.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectElectronics
Electrical engineering
Physics
Electromagnetics
Condensed matter physics
dc.title A thin film lithium niobate ferroelectric transistor
dc.type Thesis
dc.type.material Text
thesis.degree.department Physics
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Doctoral
thesis.degree.name Doctor of Philosophy


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