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dc.contributor.advisor Wilson, William L., Jr.
dc.creatorRodriguez, Juan Antonio
dc.date.accessioned 2009-06-04T00:38:28Z
dc.date.available 2009-06-04T00:38:28Z
dc.date.issued 1995
dc.identifier.urihttps://hdl.handle.net/1911/13990
dc.description.abstract Process design for integrated circuit manufacturing has traditionally been implemented with little simulation prior to fabrication. As with circuit design of a decade ago, the available simulation tools were mainframe-based, often incompatible, and lacked accurate physical models. Recent developments in process and device simulation allow accurate process modeling which reflect actual fabrication plant capabilities. A highly structured simulation environment implemented for development of Texas Instruments' PRISM$\rm\sp{TM}$ technology is described, together with results of a simulation approach to circuit model development for a new class of silicon power transistors. A new analytical model for field effect transistor modeling is also proposed. This new model preserves continuity of both the drain current and conductance over all bias conditions. It also accurately models the effects of substrate bias on device behavior.
dc.format.extent 166 p.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectElectronics
Electrical engineering
dc.title Process design and circuit model development
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Electrical and Computer Engineering
thesis.degree.discipline Engineering
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science
dc.identifier.citation Rodriguez, Juan Antonio. "Process design and circuit model development." (1995) Master’s Thesis, Rice University. https://hdl.handle.net/1911/13990.


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