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dc.contributor.advisor Wilson, William L., Jr.
dc.creatorHaynes, William Brian
dc.date.accessioned 2009-06-04T00:35:30Z
dc.date.available 2009-06-04T00:35:30Z
dc.date.issued 1994
dc.identifier.urihttps://hdl.handle.net/1911/13843
dc.description.abstract A number of different methods for electrically characterizing ZnSe thin films are presented. These include the Hall effect, current-voltage profiling, and capacitance-voltage profiling. The planar Schottky technique is used to analyze p-type ZnSe. The conductance method of Nicollian and Brews is applied for the first time to the ZnSe/GaAs MIS system to find the surface state density profile and the time constants associated with particular states. A novel photowash technique is used to make the GaAs surface gallium rich before ZnSe growth. Electron Paramagnetic Resonance is discussed in the context of probing thin film semiconductors. Room temperature mobilities for undoped, 1 $\rm\mu m,$ ZnSe films grown by Laser-assisted Metal Organic Chemical Vapor Deposition are as high as 309 $\rm cm\sp2/V$-s. Measured mobilities at 77 K are low due to hole conduction in p-type GaAs at the interface. Heterojunction barrier heights are found to be in the range of 0.6-0.9 eV and are most likely due to interface traps. Schottky diode n-values are found to be high ($>$30) because of the heterojunction barrier. P-type conduction in the nitrogen-doped samples has not been found. Undoped ZnSe is n-type and is typically depleted of carriers. Surface state densities for both untreated and Ga-rich ZnSe/p-GaAs interfaces are found to be in the range of $10\sp{12}$ $\rm cm\sp{-2}$-$\rm eV\sp{-1}.$
dc.format.extent 169 p.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.subjectElectronics
Electrical engineering
Condensed matter physics
Physics
Electromagnetics
dc.title Methods of electrically characterizing zinc selenide epitaxial layers on gallium arsenide substrates
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Physics
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science
dc.identifier.citation Haynes, William Brian. "Methods of electrically characterizing zinc selenide epitaxial layers on gallium arsenide substrates." (1994) Master’s Thesis, Rice University. https://hdl.handle.net/1911/13843.


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