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dc.contributor.authorChen, Liyang
Zhou, Panpan
Kalcheim, Yoav
Schuller, Ivan K.
Natelson, Douglas
dc.date.accessioned 2020-11-10T21:22:24Z
dc.date.available 2020-11-10T21:22:24Z
dc.date.issued 2020
dc.identifier.citation Chen, Liyang, Zhou, Panpan, Kalcheim, Yoav, et al.. "Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition." APL Materials, 8, (2020) AIP Publishing LLC: https://doi.org/10.1063/5.0023475.
dc.identifier.urihttps://hdl.handle.net/1911/109543
dc.description.abstract Vanadium sesquioxide (V2O3) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/fβ noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.
dc.language.iso eng
dc.publisher AIP Publishing LLC
dc.rights All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.title Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition
dc.type Journal article
dc.citation.journalTitle APL Materials
dc.citation.volumeNumber 8
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1063/5.0023475
dc.type.publication publisher version
dc.citation.articleNumber 101103


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