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dc.contributor.authorDai, Wei
Liu, Weikang
Yang, Jian
Xu, Chao
Alabastri, Alessandro
Liu, Chang
Nordlander, Peter
Guan, Zhiqiang
Xu, Hongxing
dc.date.accessioned 2020-08-14T20:13:37Z
dc.date.available 2020-08-14T20:13:37Z
dc.date.issued 2020
dc.identifier.citation Dai, Wei, Liu, Weikang, Yang, Jian, et al.. "Giant photothermoelectric effect in silicon nanoribbon photodetectors." Light: Science & Applications, 9, no. 1 (2020) Springer Nature: https://doi.org/10.1038/s41377-020-00364-x.
dc.identifier.urihttps://hdl.handle.net/1911/109223
dc.description.abstract The photothermoelectric (PTE) effect enables efficient harvesting of the energy of photogenerated hot carriers and is a promising choice for high-efficiency photoelectric energy conversion and photodetection. Recently, the PTE effect was reported in low-dimensional nanomaterials, suggesting the possibility of optimizing their energy conversion efficiency. Unfortunately, the PTE effect becomes extremely inefficient in low-dimensional nanomaterials, owing to intrinsic disadvantages, such as low optical absorption and immature fabrication methods. In this study, a giant PTE effect was observed in lightly doped p-type silicon nanoribbons caused by photogenerated hot carriers. The open-circuit photovoltage responsivity of the device was 3-4 orders of magnitude higher than those of previously reported PTE devices. The measured photovoltage responses fit very well with the proposed photothermoelectric multiphysics models. This research proposes an application of the PTE effect and a possible method for utilizing hot carriers in semiconductors to significantly improve their photoelectric conversion efficiency.
dc.language.iso eng
dc.publisher Springer Nature
dc.rights This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.title Giant photothermoelectric effect in silicon nanoribbon photodetectors
dc.type Journal article
dc.citation.journalTitle Light: Science & Applications
dc.contributor.org Laboratory for Nanophotonics
dc.citation.volumeNumber 9
dc.citation.issueNumber 1
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1038/s41377-020-00364-x
dc.type.publication publisher version
dc.citation.articleNumber 120


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